Free carrier generation in semiconductors induced by absorption of subband-gap light

被引：20

作者：

Vanmaekelbergh, D ^{[1
]}

van Pieterson, L ^{[1
]}

机构：

[1] Univ Utrecht, Debye Inst, NL-3508 TA Utrecht, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.80.821

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The mechanisms of electron-hole pair generation in a semiconductor induced by absorption of a subband-gap photon and mediated by a band-gap state are reviewed. The steady-state photocurrent quantum yield and the photocurrent response to harmonic modulation of the light intensity are calculated for each mechanism. It is shown, with a nanoporous GaP photoanode as an example, that the mechanisms can be distinguished by intensity-modulated photocurrent spectroscopy and that characterization of the mediating band-gap states is possible.

引用

页码：821 / 824

页数：4

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