GaN and InN nanowires grown by MBE: A comparison

被引：42

作者：

Calarco, R.

Marso, M.

机构：

[1] Forschungszentrum Julich, Inst Bio & Nanosyst IBN1, D-52425 Julich, Germany

[2] Forschungszentrum Julich, CNI Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2007年 / 87卷 / 03期

关键词：

D O I：

10.1007/s00339-007-3871-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Morphological, optical and transport properties of GaN and InN nanowires grown by molecular beam epitaxy (MBE) have been studied. The differences between the two materials in respect to growth parameters and optimization procedure was stressed. The nanowires crystalline quality has been investigated by means of their optical properties. A comparison of the transport characteristics was given. For each material a band schema was shown, which takes into account transport and optical features and is based on Fermi level pinning at the surface.

引用

页码：499 / 503

页数：5

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