Wafer level anti-stiction coatings for MEMS

被引:80
作者
Ashurst, WR [1 ]
Carraro, C
Maboudian, R
Frey, W
机构
[1] Univ Calif Berkeley, Dept Chem Engn, Berkeley, CA 94720 USA
[2] Robert Bosch Corp, Res & Technol Ctr N Amer, Palo Alto, CA 94304 USA
基金
美国国家科学基金会;
关键词
MEMS; stiction; vapor processing; wafer level coating;
D O I
10.1016/S0924-4247(03)00023-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a processing method which allows for the application of a dichlorodimethylsilane (DDMS) anti-stiction monolayer to MEMS devices on a wafer scale from the vapor phase. By utilizing vapor phase processing, many problems associated with liquid processing can be overcome. We have designed and built a reactor system that allows for the vapor phase deposition of a variety of anti-stiction coatings on both die and full 200 mm wafer levels. Contact angle analysis, atomic force microscopy (AFM) and thermal annealing have been used to characterize the film on Si(l 0 0). Film properties such as apparent work of adhesion and coefficient of static friction are obtained from coated micromachine test structures. It is shown that the DDMS monolayer deposited from the vapor phase is as effective at reducing adhesion and friction as the DDMS monolayer deposited from the (conventional) liquid phase. Moreover, it is shown that the DDMS coating can be successfully applied to a 150 mm. wafer of released devices. Post-packaging data show substantial improvement in the stiction behavior of coated devices versus uncoated devices. Published by Elsevier Science B.V.
引用
收藏
页码:213 / 221
页数:9
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