One-dimensional solution of the Boltzmann transport equation including electron-electron interactions

In this article a technique is described for solving the one-dimensional spatially dependent Boltzmann transport equation with electron-electron interactions included in the scattering model. The analysis is illustrated by solving the Boltzmann transport equation over a potential profile typical of that found in the channel of a metal-oxide-semiconductor field-effect transistor. A comparison is made between the distribution functions obtained when electron-electron interactions are included and excluded from the scattering model. It is found that electron-electron interactions significantly increase the electron population at energies greater than are available from the electric field. (C) 1996 American Institute of Physics.