Computational study of AgCl and AgBr semiconductors

被引:37
作者
Benmessabih, T.
Amrani, B. [1 ]
Hassan, F. El Haj
Hamdache, F.
Zoaeter, M.
机构
[1] Univ Mascara, Dept Phys, Mascara 29000, Algeria
[2] Fac Sci USTO, Lab Phys Plasmas & Mat Conducteurs & Applicat, Dept Phys, Oran 31000, Algeria
[3] Univ Libanaise, Fac Sci 1, Phys Mat Lab, Beirut, Lebanon
关键词
FP-LAPW; silver halides; electronic and structural properties; optical properties;
D O I
10.1016/j.physb.2006.11.046
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We present the results of a theoretical study of the structural and optoelectronic properties of silver halides AgCl and AgBr, using the full-potential linearized augmented plane wave (FP-LAPW). In this approach, the local density approximation (LDA) and generalized gradient approximation (GGA) are used for the exchange correlation potential. Moreover, the alternative form of GGA proposed by Engel and Vosko [Phys. Rev. B 47 (1993) 13164] (EVGGA) is also used for the optoelectronic properties. The calculated total energy allowed us to investigate several structural properties in particular the lattice constant, bulk modulus, pressure derivative of bulk modulus and cohesive energy. A numerical first-principles calculation of the elastic constants was used to calculate C-11, C-12 and C-44. Band structure, density of states, band gap pressure coefficients, charge density and effective masses are also given. On the other hand, an accurate calculation of linear optical functions (refraction index and the dielectric function) is performed in the photon energy range up to 20eV. The results obtained are compared with other calculations and experimental measurements. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:309 / 317
页数:9
相关论文
共 45 条
[41]   Calculated electronic structure of silver halide crystals [J].
Victora, RH .
PHYSICAL REVIEW B, 1997, 56 (08) :4417-4421
[42]   Ab initio electronic structure of silver halides calculated with self-interaction and relaxation-corrected pseudopotentials [J].
Vogel, D ;
Kruger, P ;
Pollmann, J .
PHYSICAL REVIEW B, 1998, 58 (07) :3865-3869
[43]  
Wyckoff R W G, 1963, CRYSTAL STRUCTURES
[44]   CORRELATION BETWEEN THE IONICITY CHARACTER AND THE CHARGE-DENSITY IN SEMICONDUCTORS [J].
ZAOUI, A ;
FERHAT, M ;
KHELIFA, B ;
DUFOUR, JP ;
AOURAG, H .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1994, 185 (01) :163-169
[45]   Application of the full-potential linear augmented-plane-wave method to the study of electronic properties in semiconductors with d valence electrons [J].
Zaoui, A ;
Hassan, FE .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 2002, 82 (07) :791-800