Influence of interface interruption on spin relaxation in GaAs (110) quantum wells

被引：6

作者：

Liu, L. S.

Wang, W. X. ^{[1
]}

Li, Z. H.

Liu, B. L.

Zhao, H. M.

Wang, J.

Gao, H. C.

Jiang, Z. W.

Liu, S.

Chen, H.

Zhou, J. M.

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

[2] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷

基金：

中国国家自然科学基金;

关键词：

X-ray diffraction; molecular-beam epitaxy; quantum wells; SPINTRONICS; GROWTH; GAAS; ROUGHNESS;

D O I：

10.1016/j.jcrysgro.2006.11.074

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The influence of interface growth interruption on electron spin relaxation time tau s in GaAs/AlGaAs (1 1 0) quantum wells (QWs) grown by solid source molecular-beam epitaxy (SSMBE) has been investigated by grazing incidence X-ray reflectivity and time-resolved Kerr rotation spectroscopy (TRKR). Various inverted interface interruption times were used in growing QWs. Interface roughness of these QW samples was studied by grazing incidence X-ray reflectivity. The simulated results of reflectivity, curves by standard software indicated that interface roughness decreased as the interface growth interruption time increased. TRKR measurements at room temperature showed that the appropriate growth interruption could increase spin relaxation time in GaAs/AlGaAs QWs drastically. This dramatic increase was explained by the suppression of the D'yakonov-Perel' interaction. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：93 / 96

页数：4

共 24 条

[1] STRUCTURAL-CHANGES OF THE INTERFACE, ENHANCED INTERFACE INCORPORATION OF ACCEPTORS, AND LUMINESCENCE EFFICIENCY DEGRADATION IN GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY UPON GROWTH INTERRUPTION [J].