Growth mode-related generation of electron traps at the inverted AlAs/GaAs interface

被引：12

作者：

Krispin, P ^{[1
]}

Hey, R ^{[1
]}

Kostial, H ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 03期

关键词：

D O I：

10.1063/1.366856

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Discrete electronic states at the inverted AlAs/GaAs interface grown by molecular beam epitaxy are identified by deep-level transient spectroscopy and capacitance-voltage measurements. The formation of two deep traps at the inverted AlAs/GaAs interface is shown to be related to the AlAs growth mode. We attribute the deep levels to intrinsic defects which are accumulated at the inverted AlAs/GaAs interface. The total density of interfacial electron traps can be minimized by growing AlAs in the pseudo-two-dimensional mode at a comparatively low temperature of 550 degrees C. (C) 1998 American Institute of Physics. [S0021-8979(98)01503-5].

引用

页码：1496 / 1498

页数：3

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