ELECTRONIC-PROPERTIES AND MODELING OF LATTICE-MISMATCHED AND REGROWN GAAS INTERFACES PREPARED BY METALORGANIC VAPOR-PHASE EPITAXY

被引：43

作者：

IKEDA, E

HASEGAWA, H

OHTSUKA, S

OHNO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 02期

关键词：

D O I：

10.1143/JJAP.27.180

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：180 / 187

页数：8

相关论文

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