THE ORIGIN OF A HIGHLY RESISTIVE LAYER AT A GROWTH-INTERRUPTED INTERFACE OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：20

作者：

IIMURA, Y

SHIRAISHI, T

TAKASUGI, H

KAWABE, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.338017

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2095 / 2097

页数：3

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