GROWTH-INTERRUPTED INTERFACES IN MULTILAYER MBE GROWTH OF GALLIUM-ARSENIDE

被引：23

作者：

TAKAMORI, A

MIYAUCHI, E

ARIMOTO, H

BAMBA, Y

MORITA, T

HASHIMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 06期

关键词：

D O I：

10.1143/JJAP.24.L414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L414 / L416

页数：3

共 7 条

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[6] PROTECTION OF MOLECULAR-BEAM EPITAXY GROWN ALXGA1-XAS EPILAYERS DURING AMBIENT TRANSFER [J].

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[7] GAAS GROWTH USING AN MBE SYSTEM CONNECTED WITH A 100 KV UHV MASKLESS ION IMPLANTER [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L599-L601

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