EFFECTS OF SUBSTRATE MISORIENTATION ON INCORPORATION OF AMBIENT OXYGEN AND INTERFACIAL ROUGHNESS IN ALGAAS/GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：26

作者：

CHAND, N ^{[1
]}

CHU, SNG ^{[1
]}

GEVA, M ^{[1
]}

机构：

[1] AT&T BELL LABS,CTR SOLID STATE TECHNOL,BREINIGSVILLE,PA 18031

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 22期

关键词：

D O I：

10.1063/1.105838

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By secondary ion-mass spectrometry (SIMS) and transmission-electron microscopy (TEM), we have studied the effects of substrate misorientation and GaAs monolayers on the incorporation of ambient oxygen and interfacial roughness in AlxGa1-xAs/GaAs heterostructures grown by molecular-beam epitaxy. Consistent with earlier works, O is found in AlGaAs only, and not in GaAs. Incorporation of O, and surface and interfacial roughness are reduced if the substrate is misoriented towards <111> A. The O atoms in AlGaAs are mobile enough to segregate on the surface and remain trapped at the GaAs/AlGaAs inverted interfaces, even when the GaAs layer is as thin as one monolayer.

引用

页码：2874 / 2876

页数：3

共 19 条

[1] INCORPORATION OF CARBON IN HEAVILY DOPED ALXGA1-XAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].

ABERNATHY, CR ;

PEARTON, SJ ;

MANASREH, MO ;

FISCHER, DW ;

TALWAR, DN .

APPLIED PHYSICS LETTERS, 1990, 57 (03) :294-296

[2] SECONDARY ION MASS-SPECTROMETRY STUDY OF OXYGEN ACCUMULATION AT GAAS ALGAAS INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

ACHTNICH, T ;

BURRI, G ;

PY, MA ;

ILEGEMS, M .

APPLIED PHYSICS LETTERS, 1987, 50 (24) :1730-1732

[3] INTERFACE DISORDER IN ALAS/(AL)GAAS BRAGG REFLECTORS [J].

ASOM, MT ;

GEVA, M ;

LEIBENGUTH, RE ;

CHU, SNG .

APPLIED PHYSICS LETTERS, 1991, 59 (08) :976-978

[4] INVESTIGATION OF HETEROJUNCTIONS FOR MIS DEVICES WITH OXYGEN-DOPED ALXGA1-XAS ON N-TYPE GAAS [J].

CASEY, HC ;

CHO, AY ;

LANG, DV ;

NICOLLIAN, EH ;

FOY, PW .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3484-3491

[5] VARIATION OF BACKGROUND IMPURITIES IN ALXGA1-XAS (0.3 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.4) WITH GROWTH TEMPERATURE - IMPLICATIONS FOR DEVICE LEAKAGE CURRENT AND SURFACE HETEROINTERFACE ROUGHNESS [J].

CHAND, N ;

HARRIS, TD ;

CHU, SNG ;

BECKER, EE ;

SERGENT, AM ;

SCHNOES, M ;

LANG, DV .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :20-25

[6] ORIGIN AND IMPROVEMENT OF INTERFACE ROUGHNESS IN ALGAAS/GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHAND, N ;

CHU, SNG .

APPLIED PHYSICS LETTERS, 1990, 57 (17) :1796-1798

[7] EXCELLENT UNIFORMITY AND VERY LOW (LESS-THAN-50 A/CM2) THRESHOLD CURRENT-DENSITY STRAINED INGAAS QUANTUM-WELL DIODE-LASERS ON GAAS SUBSTRATE [J].

CHAND, N ;

BECKER, EE ;

VANDERZIEL, JP ;

CHU, SNG ;

DUTTA, NK .

APPLIED PHYSICS LETTERS, 1991, 58 (16) :1704-1706

[8] SUBSTANTIAL IMPROVEMENT BY SUBSTRATE MISORIENTATION IN DC PERFORMANCE OF AL0.5GA0.5AS/GAAS/AL0.5GA0.5AS DOUBLE-HETEROJUNCTION NPN BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHAND, N ;

BERGER, PR ;

DUTTA, NK .

APPLIED PHYSICS LETTERS, 1991, 59 (02) :186-188

[9] EFFECT OF SUBSTRATE TILTING ON MOLECULAR-BEAM EPITAXIAL GROWN ALGAAS/GAAS LASERS HAVING VERY LOW THRESHOLD CURRENT DENSITIES [J].

CHEN, HZ ;

GHAFFARI, A ;

MORKOC, H ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1987, 51 (25) :2094-2096

[10] CHARACTERIZATION OF GAAS/(GAAS)N(ALAS)M SURFACE-EMITTING LASER STRUCTURES THROUGH REFLECTIVITY AND HIGH-RESOLUTION ELECTRON-MICROSCOPY MEASUREMENTS [J].

FAIST, J ;

GANIERE, JD ;

BUFFAT, P ;

SAMPSON, S ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (03) :1023-1032

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