Efficiency enhancement and retarded dark-spots growth of organic light-emitting devices by high-temperature processing

被引：43

作者：

Chan, MY ^{[1
]}

Lai, SL ^{[1
]}

Wong, FL ^{[1
]}

Lengyel, O ^{[1
]}

Lee, CS ^{[1
]}

Lee, ST ^{[1
]}

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2003年 / 371卷 / 5-6期

关键词：

D O I：

10.1016/S0009-2614(03)00310-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Device stability and growth of dark spots are major concerns for the large-scale applications of organic light-emitting devices (OLEDs). OLEDs with crystalline hole-transporting layer have been fabricated by depositing organic layers at elevated substrate temperatures. Such devices showed significant improvement in electroluminescent efficiency, morphological stability, storage stability, and also retarded dark-spot growth. The lower hole mobility in crystalline NPB films is attributed to the improved device performance, leading to a better carrier balancing in the NPB/AlQ(3) interface. Such crystalline NPB films also demonstrate a smoother surface, even after high-temperature annealing, and gives beneficial advantages for improving the thermal durability of OLEDs. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：700 / 706

页数：7

共 16 条

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