Model of tunneling transistors based on graphene on SiC

被引:30
作者
Michetti, Paolo [1 ]
Cheli, Martina [1 ]
Iannaccone, Giuseppe [1 ]
机构
[1] Univ Pisa, Dipartimento Ingn Informaz Elettron, I-56122 Pisa, Italy
关键词
energy gap; epitaxial growth; epitaxial layers; field effect transistors; graphene; nanoelectronics; silicon compounds; wide band gap semiconductors; BANDGAP;
D O I
10.1063/1.3361657
中图分类号
O59 [应用物理学];
学科分类号
摘要
Recent experiments shown that graphene epitaxially grown on Silicon carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics. With an accurate model, we explore the design parameter space for a fully ballistic graphene-on-SiC tunnel field-effect transistors, and assess the dc and high frequency figures of merit. The steep subthreshold behavior can enable I-ON/I-OFF ratios exceeding 10(4) even with a low supply voltage of 0.15 V, for devices with gatelength down to 30 nm. Intrinsic transistor delays smaller than 1 ps are obtained. These factors make the device an interesting candidate for low-power nanoelectronics beyond CMOS.
引用
收藏
页数:3
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