Pattern collapse in high aspect ratio DUV- and 193nm resists

被引：30

作者：

Domke, WD ^{[1
]}

Graffenberg, VL ^{[1
]}

Patel, S ^{[1
]}

Rich, GK ^{[1
]}

Cao, HB ^{[1
]}

Nealey, PF ^{[1
]}

机构：

[1] Int SEMATECH, Austin, TX USA

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2 | 2000年 / 3999卷

关键词：

D O I：

10.1117/12.388293

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The pattern collapse behavior of a set of 193nm resists in high aspect ratios was quantified. For all the resists investigated a general behavior could be observed: the collapse did not only depend on aspect ratio but also on pitch. With higher aspect ratio/pitch (normalized aspect ratio: NAR) all the resists go in a sigmoidal step from no collapse to total collapse. Surfactants in the developer did not have a consistent effect on pattern collapse. Resists of different polymer structure showed a very different tendency to collapse: acrylic resists collapse earlier than cyclo-olefinic resists. It could be deduced that pattern collapse will be a significant problem starting at the 130nm node, if the film thickness range of the SIA roadmap are maintained. Comparison with data obtained for DUV resists showed that pattern collapse might limit the application of DUV resists in NGL. The modeling work at the University of Wisconsin shows the big impact of thermo-mechanical thin film properties on the pattern collapse problem.

引用

页码：313 / 321

页数：5

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