Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

被引：145

作者：

Shin, Byungha ^{[1
]}

Weber, Justin R. ^{[2
]}

Long, Rathnait D. ^{[1
,3
]}

Hurley, Paul K. ^{[3
]}

Van de Walle, Chris G. ^{[2
]}

McIntyre, Paul C. ^{[1
]}

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 15期

关键词：

aluminium compounds; atomic layer deposition; crystal defects; dangling bonds; gallium arsenide; hydrogenation; III-V semiconductors; indium compounds; passivation; substrates; TOTAL-ENERGY CALCULATIONS; AL2O3; DEFECTS; FILMS;

D O I：

10.1063/1.3399776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report experimental and theoretical studies of defects producing fixed charge within Al2O3 layers grown by atomic layer deposition (ALD) on In0.53Ga0.47As(001) substrates and the effects of hydrogen passivation of these defects. Capacitance-voltage measurements of Pt/ALD-Al2O3/n-In0.53Ga0.47As suggested the presence of positive bulk fixed charge and negative interfacial fixed charge within ALD-Al2O3. We identified oxygen and aluminum dangling bonds (DBs) as the origin of the fixed charge. First-principles calculations predicted possible passivation of both O and Al DBs, which would neutralize fixed charge, and this prediction was confirmed experimentally; postmetallization forming gas anneal removed most of the fixed charge in ALD-Al2O3.

引用

页数：3

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