Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As

被引：54

作者：

Chiu, H. C. ^{[1
]}

Tung, L. T. ^{[1
]}

Chang, Y. H. ^{[1
]}

Lee, Y. J. ^{[1
]}

Chang, C. C. ^{[1
]}

Kwo, J. ^{[2
]}

Hong, M. ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30055, Taiwan

[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30055, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 20期

关键词：

aluminium compounds; atomic layer deposition; capacitance; electrical conductivity; electronic density of states; Fermi level; gallium arsenide; III-V semiconductors; indium compounds; interface states; semiconductor-insulator boundaries;

D O I：

10.1063/1.3027476

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic-layer-deposited Al2O3 on In0.53Ga0.47As with short air exposure between the oxide and semiconductor deposition has enabled the demonstration of nearly ideal frequency-dependent and quasistatic capacitance-voltage (C-V) characteristics. The excellent quasistatic C-V characteristics indicate a high efficiency of 63% for the Fermi-level movement near the midgap. A low mean interfacial density of states ((D)over bar(it))similar to 2.5x10(11) cm(-2) eV(-1) was determined under 1 MHz using a charge pumping method, which was also employed to probe the depth profile of bulk traps (N-bt) and the energy dependence of D-it at 50 kHz: a low N-bt similar to 7x10(18) cm(-3) and a D-it of (2-4)x10(11) cm(-2) eV(-1) in the lower half of the band gap and a higher D-it of similar to 10(12) cm(-2) eV(-1) in the upper half of the band gap. The employment of charge pumping method has given a more accurate determination of D-it, which is usually overestimated using other commonly methods such as the Terman, conductance, and high-low frequencies due to the influence of weak inversion at room temperature.

引用

页数：3

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