Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN

被引：100

作者：

Chang, Y. C.

Chiu, H. C.

Lee, Y. J.

Huang, M. L.

Lee, K. Y.

Hong, M. ^{[1
]}

Chiu, Y. N.

Kwo, J.

Wang, Y. H.

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30012, Taiwan

[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30012, Taiwan

[3] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 74145, Taiwan

[4] Natl Synchrotron Radiat Res Ctr, Div Res, Hsinchu, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 23期

关键词：

D O I：

10.1063/1.2746057

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High kappa HfO2 was deposited on n-type GaN (0001) using atomic layer deposition with Hf(NCH3C2H5)(4) and H2O as the precursors. Excellent electrical properties of TiN/HfO2/GaN metal-oxide-semiconductor diode with the oxide thickness of 8.8 nm were obtained, in terms of low electrical leakage current density (similar to 10(-6)A/cm(2) at V-FB+1 V), well behaved capacitance-voltage (C-V) curves having a low interfacial density of states of 2x10(11) cm(-2) eV(-1) at the midgap, and a high dielectric constant of 16.5. C-V curves with clear accumulation and depletion behaviors were shown, along with negligible frequency dispersion and hysteresis with sweeping biasing voltages. The structural properties studied by high-resolution transmission electron microscopy and x-ray reflectivity show an atomically smooth oxide/GaN interface, with an interfacial layer of GaON similar to 1.8 nm thick, as probed using x-ray photoelectron spectroscopy. (c) 2007 American Institute of Physics.

引用

页数：3

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