MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaN

被引：49

作者：

Chang, Y. C.

Lee, Y. J.

Chiu, Y. N.

Lin, T. D.

Wu, S. Y.

Chiu, H. C.

Kwo, J.

Wang, Y. H.

Hong, M. ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu, Taiwan

[3] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷

关键词：

interfaces; molecular beam epitaxy; gadolinium compounds; nitrides; dielectric materials; semiconducting gallium compounds;

D O I：

10.1016/j.jcrysgro.2006.11.259

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High kappa Ga2O3(Gd2O3) dielectric was deposited on n-type GaN (0001) using molecular beam epitaxy (MBE). TiN/Ga2O3(Gd2O3)/ GaN metal-oxide-semiconductor (MOS) diodes have exhibited a negligible frequency dispersion, low leakage currents (similar to 10(-8) A/cm(2)), and a low interfacial density of states (D-it) of 10(11) cm(-2) eV(-1) at the midgap. Well-behaved capacitance-voltage (C-P) curves with accumulation and depletion behaviors were shown, with a dielectric constant of 14.7. Forming gas annealing at 600 degrees C has reduced the frequency dispersion in the C-V curves. A sharp oxide/semiconductor interface was shown by high-resolution transmission electron microscopy (HR-TEM). (c) 2007 Published by Elsevier B.V.

引用

页码：390 / 393

页数：4

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