Atomic-layer-deposited HfO2 on In0.53Ga0.47As:: Passivation and energy-band parameters

被引：100

作者：

Chang, Y. C. ^{[1
]}

Huang, M. L. ^{[1
]}

Lee, K. Y. ^{[1
]}

Lee, Y. J. ^{[1
]}

Lin, T. D. ^{[1
]}

Hong, M. ^{[1
]}

Kwo, J. ^{[2
]}

Lay, T. S. ^{[3
]}

Liao, C. C. ^{[4
]}

Cheng, K. Y. ^{[4
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30012, Taiwan

[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30012, Taiwan

[3] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Kaohsiung 804, Taiwan

[4] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 07期

关键词：

D O I：

10.1063/1.2883967

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic-layer-deposited high kappa dielectric HfO2 films on air-exposed In0.53Ga0.47As/InP (100), using Hf(NCH3C2H5)(4) and H2O as the precursors, were found to have an atomically sharp interface free of arsenic oxides, an important aspect for Fermi level unpinning. A careful and thorough probing, using high-resolution angular-resolved x-ray photoelectron spectroscopy (XPS) with synchrotron radiation, however, observed the existence of Ga2O3, In2O3, and In(OH)(3) at the interface. The current transport of the metal-oxide-semiconductor capacitor for an oxide 7.8 nm thick follows the Fowler-Nordheim tunneling mechanism and shows a low leakage current density of similar to 10(-8) A/cm(2) at V-FB+1 V. Well behaved frequency-varying capacitance-voltage curves were measured and an interfacial density of states of 2x10(12) cm(-2) eV(-1) was derived. A conduction-band offset of 1.8 +/- 0.1 eV and a valence-band offset of 2.9 +/- 0.1 eV have been determined using the current transport data and XPS, respectively. (C) 2008 American Institute of Physics.

引用

页数：3

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