EMPIRICAL EXPRESSIONS FOR THE ALLOY COMPOSITION AND TEMPERATURE-DEPENDENCE OF THE BAND-GAP AND INTRINSIC CARRIER DENSITY IN GAXIN1-XAS

被引：194

作者：

PAUL, S

ROY, JB

BASU, PK

机构：

[1] Institute of Radio Physics and Electronics, University of Calcutta, Calcutta 700 009

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 02期

关键词：

D O I：

10.1063/1.348919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The band gap and the intrinsic carrier concentration in a semiconductor are important material parameters needed in the interpretation of various experimental and theoretical data. In the present work, empirical expressions for both the parameters as a function of alloy composition chi and temperature are proposed for Ga(x)In1-xAs. The calculated results for band gap are in close agreement with the available data, while the same for intrinsic concentration give fair agreement with the data at the two ends of the alloy composition.

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页码：827 / 829

页数：3

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