DOPING AND COMPOSITION PROFILING IN HG1-XCDXTE BY THE GRADED CAPACITANCE-VOLTAGE METHOD

被引：16

作者：

ROSBECK, JP

HARPER, ME

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 05期

关键词：

D O I：

10.1063/1.339599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1717 / 1722

页数：6

共 20 条

[1] HGCDTE HETEROJUNCTIONS [J].

BRATT, PR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1687-1691

[2] HIGH-PERFORMANCE BACKSIDE-ILLUMINATED HG0.78CD0.22TE-CDTE(LAMBDA-CO=10-MU-M) PLANAR DIODES [J].

CHU, M ;

VANDERWYCK, AHB ;

CHEUNG, DT .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :486-488

[3]

DORNHAUS R, 1983, NARROW GAP SEMICONDU, P251

[4] LIFETIME AND CARRIER-CONCENTRATION PROFILE OF B+-IMPLANTED P-TYPE HGCDTE [J].

FRAENKEL, A ;

SCHACHAM, SE ;

BAHIR, G ;

FINKMAN, E .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) :3916-3922

[5] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

GROVE, AS ;

DEAL, BE ;

SNOW, EH ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+

[6] CALCULATION OF INTRINSIC CARRIER CONCENTRATION IN HG1-XCDXTE [J].

HANSEN, GL ;

SCHMIT, JL .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1639-1640

[7] EFFECTS OF ANNEALING ON THE ELECTRICAL-PROPERTIES OF CDXHG1-XTE [J].

JONES, CL ;

QUELCH, MJT ;

CAPPER, P ;

GOSNEY, JJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :9080-9092

[8] THE BEHAVIOR OF DOPED HG1-XCDXTE EPITAXIAL LAYERS GROWN FROM HG-RICH MELTS [J].

KALISHER, MH .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :365-372

[9] DETERMINATION OF SEMICONDUCTOR QUASI-FERMI LEVEL SEPARATION UNDER ILLUMINATION [J].

KAR, S ;

VARMA, S .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :1988-1990

[10]

KASAI I, 1985, 1985 P INFR INF S DE

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