HGCDTE HETEROJUNCTIONS

被引：35

作者：

BRATT, PR

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.572258

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：1687 / 1691

页数：5

相关论文

共 9 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &
[2] SIMPLIFIED MODEL FOR GRADED-GAP HETEROJUNCTIONS
CHEUNG, DT
CHIANG, SY
PEARSON, GL
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (03) : 263 - 266
[3] EGAR D, 1981, J APPL PHYS, V52, P490
[4] DOPING PROPERTIES OF SELECTED IMPURITIES IN HG1-XCDXTE
JOHNSON, ES
SCHMIT, JL
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (01) : 25 - 38
[5] DIFFUSION OF INDIUM IN HG1-XCDXTE
MARGALIT, S
NEMIROVSKY, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) : 1406 - 1408
[6] COMMON ANION HETEROJUNCTIONS - CDTE-CDHGTE
MIGLIORATO, P
WHITE, AM
[J]. SOLID-STATE ELECTRONICS, 1983, 26 (01) : 65 - 69
[7] Milnes AG, 1972, HETEROJUNCTIONS META
[8] N-N SEMICONDUCTOR HETEROJUNCTIONS
OLDHAM, WG
MILNES, AG
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 121 - 132
[9] RILEY KJ, 1980, SPIE, V217, P206