High density, non-porous anatase titania thin films for device applications

被引:61
作者
Fan, Q [1 ]
McQuillin, B
Ray, AK
Turner, ML
Seddon, AB
机构
[1] Sheffield Hallam Univ, Sch Engn, Elect Res Grp, Phys Elect & Fibre Opt Res Labs, Sheffield S1 1WB, S Yorkshire, England
[2] Univ Sheffield, Dept Chem, Sheffield S1 4DU, S Yorkshire, England
[3] Univ Nottingham, Sch Mech Mfg Engn & Management, Nottingham NG7 2RD, England
关键词
D O I
10.1088/0022-3727/33/21/303
中图分类号
O59 [应用物理学];
学科分类号
摘要
TEM studies have been performed on 50 nm thick monolayer films of sol-gel derived anatase titania (TiO(2)). It is found that a dense polycrystalline structure, having low porosity and consisting of nanocrystallites ranging from 5-20 nm in diameter, is the result of a sintering process involving temperature ramping up to 550 degreesC. Ohmic conduction is believed to be due to almost Aat band conditions caused by partial depletion of carriers from the crystallites.
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收藏
页码:2683 / 2686
页数:4
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