High density, non-porous anatase titania thin films for device applications

被引:61
作者
Fan, Q [1 ]
McQuillin, B
Ray, AK
Turner, ML
Seddon, AB
机构
[1] Sheffield Hallam Univ, Sch Engn, Elect Res Grp, Phys Elect & Fibre Opt Res Labs, Sheffield S1 1WB, S Yorkshire, England
[2] Univ Sheffield, Dept Chem, Sheffield S1 4DU, S Yorkshire, England
[3] Univ Nottingham, Sch Mech Mfg Engn & Management, Nottingham NG7 2RD, England
关键词
D O I
10.1088/0022-3727/33/21/303
中图分类号
O59 [应用物理学];
学科分类号
摘要
TEM studies have been performed on 50 nm thick monolayer films of sol-gel derived anatase titania (TiO(2)). It is found that a dense polycrystalline structure, having low porosity and consisting of nanocrystallites ranging from 5-20 nm in diameter, is the result of a sintering process involving temperature ramping up to 550 degreesC. Ohmic conduction is believed to be due to almost Aat band conditions caused by partial depletion of carriers from the crystallites.
引用
收藏
页码:2683 / 2686
页数:4
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