Metal/semiconductor phase transition in chromium nitride(001) grown by rf-plasma-assisted molecular-beam epitaxy

被引：106

作者：

Constantin, C ^{[1
]}

Haider, MB ^{[1
]}

Ingram, D ^{[1
]}

Smith, AR ^{[1
]}

机构：

[1] Ohio Univ, Dept Phys & Astron, Condensed Matter & Surface Sci Program, Athens, OH 45701 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 26期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1836878

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Structural and electronic properties of stoichiometric single-phase CrN(001) thin films grown on MgO(001) substrates by radio-frequency N plasma-assisted molecular-beam epitaxy, are investigated. In situ room-temperature scanning tunneling microscopy clearly shows the 1x1 atomic periodicity of the crystal structure as well as long-range topographic distortions which are characteristic of a semiconductor surface. This semiconductor behavior is consistent with ex situ resistivity measurements over the range 285 K and higher, whereas below 260 K, metallic behavior is observed. The resistivity-derived band gap for the high-temperature region, 71 meV, is consistent with the tunneling spectroscopy results. The observed electronic (semiconductor/metal) transition temperature coincides with the temperature of the known coincident magnetic (para-antiferro) and structural (cubic-orthorhombic) phase transitions. (C) 2004 American Institute of Physics.

引用

页码：6371 / 6373

页数：3

共 18 条

[1] Surface and bulk electronic structure of ScN(001) investigated by scanning tunneling microscopy/spectroscopy and optical absorption spectroscopy [J].

Al-Brithen, HA ;

Smith, AR ;

Gall, D .

PHYSICAL REVIEW B, 2004, 70 (04) :045303-1

[2]

Browne J. D., 1970, Physica Status Solidi A, V1, P715, DOI 10.1002/pssa.19700010411

[3] Direct determination of exact charge states of surface point defects using scanning tunneling microscopy: As vacancies on GaAs (110) [J].

Chao, KJ ;

Smith, AR ;

Shih, CK .

PHYSICAL REVIEW B, 1996, 53 (11) :6935-6938

[4] ANTIFERROMAGNETIC STRUCTURE OF CRN [J].

CORLISS, LM ;

ELLIOTT, N ;

HASTINGS, JM .

PHYSICAL REVIEW, 1960, 117 (04) :929-935

[5]

EDDINE MN, 1969, CR ACAD SCI B PHYS, V269, P574

[6] THE INFLUENCE OF MICROSTRUCTURE ON STRESS STATE OF SPUTTER DEPOSITED CHROMIUM NITRIDE FILMS [J].

FABIS, PM ;

COOKE, RA ;

MCDONOUGH, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (05) :3819-3826

[7] TUNNELING SPECTROSCOPY OF THE (110)-SURFACE OF DIRECT-GAP III-V SEMICONDUCTORS [J].

FEENSTRA, RM .

PHYSICAL REVIEW B, 1994, 50 (07) :4561-4570

[8] Competition between magnetic and structural transitions in CrN [J].

Filippetti, A ;

Pickett, WE ;

Klein, BM .

PHYSICAL REVIEW B, 1999, 59 (10) :7043-7050

[9] Magnetic stress as a driving force of structural distortions: The case of CrN [J].

Filippetti, A ;

Hill, NA .

PHYSICAL REVIEW LETTERS, 2000, 85 (24) :5166-5169

[10] Band gap in epitaxial NaCl-structure CrN(001) layers [J].

Gall, D ;

Shin, CS ;

Haasch, RT ;

Petrov, I ;

Greene, JE .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (09) :5882-5886

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