A new methodology to predict energy bandgaps in GaxIn1-xAsyP1-y compounds by ANFIS theories

被引：33

作者：

Chen, SL ^{[1
]}

Fann, DA ^{[1
]}

机构：

[1] Da Yeh Univ, Dept Elect Engn, Changhwa 515, Taiwan

来源：

OPTOELECTRONIC MATERIALS AND DEVICES II | 2000年 / 4078卷

关键词：

D O I：

10.1117/12.392185

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a novel fast, and accurate method to predict the energy bandgap E-g in GaxIn1-xAsyP1-y quaternary compounds by using fuzzy theory and neural network is proposed It has been developed to analyze the energy bandgap due to the adjustable ratios x and y of quaternary, compounds. The prediction results are compared with experimental data obtained from actual devices. A good agreement (error < 0.75%) has been obtained on the energy bandgap versus the adjustable ratios x and y of quaternary compounds.

引用

页码：544 / 550

页数：7

共 9 条

[1]

ANTYPAS GA, 1973, GALLIUM ARSENIDE REL, V17, P48

[2]

Bogatov A. P., 1975, Soviet Journal of Quantum Electronics, V4, DOI 10.1070/QE1975v004n10ABEH011746

[3] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J].