Pentacene field-effect transistors on plastic films operating at high temperature above 100 °C

被引：55

作者：

Sekitani, T ^{[1
]}

Iba, S ^{[1
]}

Kato, Y ^{[1
]}

Someya, T ^{[1
]}

机构：

[1] Univ Tokyo, Sch Engn, Quantum Phase Elect Ctr, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 17期

关键词：

D O I：

10.1063/1.1812374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have manufactured pentacene field-effect transistors (FETs) on polyimide base films with polyimide gate dielectric layers, and characterized electronic performance and surface morphology with application of heat in the temperature range from 30 to 210 degreesC. It is found that mobility of pentacene FETs is enhanced from 0.27 to 0.71 cm(2)/V s when measurement temperatures varies from 30 to 160 degreesC under light-shielding nitrogen environment. To investigate postannealing effects, we have measured transfer curves at 30 degreesC after many heat cycles at various temperatures. Mobility is almost constant even after annealing at 130 degreesC, showing the excellent stability of the present device at high temperatures. (C) 2004 American Institute of Physics.

引用

页码：3902 / 3904

页数：3