学术探索
学术期刊
新闻热点
数据分析
智能评审

Characterization of step coverage change in ultraviolet-transparent plasma enhanced chemical vapor deposition silicon nitride films

被引：14
作者：
Bierner, J
Jacob, M
Schönherr, H
机构：
[1] Infineon Technol, D-93049 Regensburg, Germany
[2] Infineon Technol, Villach 9500, Australia
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2000年 / 18卷 / 06期
关键词：
D O I：
10.1116/1.1314394
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Ultraviolet (UV)-transparent silicon nitride films were deposited in a plasma enhanced chemical vapor deposition reactor. The dependence of the film properties on process parameters has been studied. UV transmittance, refractive index, hydrogen content, and step coverage were compared to UV-opaque films. A significant difference in film growth between UV-opaque and UV-transparent SiNx layers has been detected. When him properties shift to an increased UV transparency, step coverage worsens significantly. This phenomenon is suggested to be caused by a strong reduction to Si-Si bonds fur films below stoichiometric composition at low SiH4/NH3 gas flow ratios. (C) 2000 American Vacuum Society. [S0734-2101(00)03506-5].
引用
收藏
页码：2843 / 2846
页数：4
相关论文
共 11 条
[1]  
BRENDEL R, THESIS U ERLANGEN NU
[2]   CONFIGURATIONAL STATISTICS IN A-SIXNYHZ ALLOYS - A QUANTITATIVE BONDING ANALYSIS [J].
BUSTARRET, E ;
BENSOUDA, M ;
HABRARD, MC ;
BRUYERE, JC ;
POULIN, S ;
GUJRATHI, SC .
PHYSICAL REVIEW B, 1988, 38 (12) :8171-8184
[3]   HYDROGEN CONTENT OF A VARIETY OF PLASMA-DEPOSITED SILICON NITRIDES [J].
CHOW, R ;
LANFORD, WA ;
WANG, KM ;
ROSLER, RS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5630-5633
[4]  
CLAASSEN WAP, 1983, J ELECTROCHEM SOC, V130, P2219
[5]   A SPECTROSCOPIC INVESTIGATION OF GROWTH REGIMES IN SILANE AMMONIA DISCHARGES USED FOR PLASMA NITRIDE DEPOSITION [J].
HICKS, SE ;
GIBSON, RAG .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1991, 11 (04) :455-472
[6]  
KIERMASZ A, 1990, UNPUB SEMICONDUCTOR, P108
[7]  
STADTMULLER M, 1993, THESIS U BUNDESWEHR
[8]   THE MECHANISM OF PLASMA-INDUCED DEPOSITION OF AMORPHOUS-SILICON FROM SILANE [J].
VEPREK, S ;
HEINTZE, M .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1990, 10 (01) :3-26
[9]   MODULATED DISCHARGES - EFFECT ON PLASMA PARAMETERS AND DEPOSITION [J].
VERDEYEN, JT ;
BEBERMAN, J ;
OVERZET, L .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :1851-1856
[10]   INVESTIGATION OF A HIGH-QUALITY AND ULTRAVIOLET-LIGHT TRANSPARENT PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATION [J].
WANG, CK ;
YING, TL ;
WEI, CS ;
LIU, LM .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9A) :4736-4740
12