A SPECTROSCOPIC INVESTIGATION OF GROWTH REGIMES IN SILANE AMMONIA DISCHARGES USED FOR PLASMA NITRIDE DEPOSITION

被引：16

作者：

HICKS, SE

GIBSON, RAG

机构：

[1] Department of Applied Physics and Electronic and Manufacturing Engineering, University of Dundee, Dundee

来源：

PLASMA CHEMISTRY AND PLASMA PROCESSING | 1991年 / 11卷 / 04期

关键词：

PECVD; DEPOSITION; AMORPHOUS SILICON NITRIDE; ALPHA-SIN-H; SILANE; AMMONIA; GROWTH REGIMES; AMINOSILANES; OES;

D O I：

10.1007/BF01447159

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

Using optical emission spectroscopy (OES) we have been able to distinguish three operating regimes for the ammonia-silane glow discharge used in plasma nitride deposition. By monitoring the deposition rate and analyzing the structure and composition of the a-SiN : H films it has been possible to correlate these three plasma regimes with three distinct deposition mechanisms. The growth plasma may be tuned to each of these regimes by varying one or more of the following three external parameters: ammonia mole fraction, r.f. power, and gas flow rate. Choice of these parameters allows control of the NH(n) radical concentration and the residence time in the reactor, and hence control over the number of gas-phase SiH(n)-NH(n) radical-radical reactions. Thus OES makes control of the film deposition mechanism possible.

引用

页码：455 / 472

页数：18

共 20 条

[1] PHOTOELECTRONIC PROPERTIES OF AMORPHOUS-SILICON NITRIDE COMPOUNDS [J].