PHOTOELECTRONIC PROPERTIES OF AMORPHOUS-SILICON NITRIDE COMPOUNDS

[1] DOPING EFFECTS IN OFF-STOICHIOMETRIC GLOW-DISCHARGE AMORPHOUS-SILICON NITRIDE [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 116 - 118

[2] BRENZIKOFER R, 1981, 7TH LAT AM S SOL STA

[3] Bube RH., 1978, PHOTOCONDUCTIVITY SO

[4] CATTALANO A, 1982, 16TH P IEEE PHOT SPE, P1421

[5] CRANDALL R, 1980, SOLAR CELLS, V2

[6] MINORITY-CARRIER TRANSPORT IN DEPLETION LAYERS OF N-I-P A-SI-H SOLAR-CELLS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 491 - 494

[7] EFFECT OF BORON DOPING AND ITS PROFILE ON CHARACTERISTICS OF P-I-N A-SI-H SOLAR-CELLS [J]. SOLAR ENERGY MATERIALS, 1983, 8 (04): : 441 - 455

[8] JACKSON WB, 1983, AM PHYS REV B, V27, P8

[9] ELECTRONIC AND STRUCTURAL-PROPERTIES OF PLASMA-DEPOSITED A-SI-O-H - STORY OF O2 [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 279 - 284

[10] KNIGHTS JC, 1976, STRUCTURE EXCITATION, P296

[1] DOPING EFFECTS IN OFF-STOICHIOMETRIC GLOW-DISCHARGE AMORPHOUS-SILICON NITRIDE [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 116 - 118

[2] BRENZIKOFER R, 1981, 7TH LAT AM S SOL STA

[3] Bube RH., 1978, PHOTOCONDUCTIVITY SO

[4] CATTALANO A, 1982, 16TH P IEEE PHOT SPE, P1421

[5] CRANDALL R, 1980, SOLAR CELLS, V2

[6] MINORITY-CARRIER TRANSPORT IN DEPLETION LAYERS OF N-I-P A-SI-H SOLAR-CELLS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 491 - 494

[7] EFFECT OF BORON DOPING AND ITS PROFILE ON CHARACTERISTICS OF P-I-N A-SI-H SOLAR-CELLS [J]. SOLAR ENERGY MATERIALS, 1983, 8 (04): : 441 - 455

[8] JACKSON WB, 1983, AM PHYS REV B, V27, P8

[9] ELECTRONIC AND STRUCTURAL-PROPERTIES OF PLASMA-DEPOSITED A-SI-O-H - STORY OF O2 [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 279 - 284

[10] KNIGHTS JC, 1976, STRUCTURE EXCITATION, P296