共 17 条
- [1] PHOTOELECTRONIC PROPERTIES OF AMORPHOUS-SILICON NITRIDE COMPOUNDS [J]. SOLAR ENERGY MATERIALS, 1984, 10 (02): : 151 - 170
- [2] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (01): : 1 - 16
- [3] TRANSPORT IN LITHIUM-DOPED AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (03): : 205 - 217
- [4] 2-PHASE STRUCTURE OF A-SI1-XNX-H FABRICATED BY MICROWAVE GLOW-DISCHARGE TECHNIQUE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (01): : 19 - 23
- [5] PROPERTIES OF AMORPHOUS SEMICONDUCTING A-SI-H/A-SINX-H MULTILAYER FILMS AND OF A-SINX-H ALLOYS [J]. PHYSICAL REVIEW B, 1984, 30 (10): : 5791 - 5799
- [6] ELECTRONIC-STRUCTURE OF HYDROGENATED AND UNHYDROGENATED AMORPHOUS SINX (0-LESS-THAN-X-LESS-THAN-1.6) - A PHOTOEMISSION-STUDY [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1896 - 1910
- [7] WIDE OPTICAL-GAP, PHOTOCONDUCTIVE A-SIXN1-X-H [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L811 - L813
- [8] ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS [J]. PHYSICAL REVIEW LETTERS, 1970, 25 (08) : 509 - &
- [10] ANOMALOUS VARIATIONS IN CONDUCTIVITY OF A-SI - H WITH NITROGEN DOPING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L485 - L487