Contribution of triple junctions to the diffusion anomaly in nanocrystalline materials

被引:71
作者
Chen, Ying [1 ]
Schuh, Christopher A. [1 ]
机构
[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
基金
美国国家科学基金会;
关键词
grain boundary diffusion; nanocrystalline materials; triple junctions; grain boundaries;
D O I
10.1016/j.scriptamat.2007.03.057
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Diffusion in nanocrystalline materials is often greatly enhanced even beyond what is expected from a high density of equilibrated grain boundaries. We propose that this 'anomalous diffusion' may in many cases be due to short-circuit diffusion along triple junctions. Quantitative analysis shows that triple junction diffusion can reasonably explain anomalies of several orders of magnitude. Therefore, previous suggestions of non-equilibrium grain boundary structures in nanocrystalline materials may not be required to rationalize the anomaly in every case. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:253 / 256
页数:4
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