Performance evaluation of an advanced XRF elemental mapping system featuring a novel ring-shaped monolithic array of silicon drift detectors

被引:9
作者
Alberti, R. [1 ]
Buzzetti, S.
Fiorini, C.
Guazzoni, C.
Klatka, T.
Lechner, P.
Longoni, A.
Strueder, L.
机构
[1] Politecn Milan, Dipartimento Elettr & Informat, I-20133 Milan, Italy
[2] Ist Nazl Fis Nucl, Sez Milano, I-20133 Milan, Italy
[3] Max Planck Inst Halbleiterlabor, D-81739 Munich, Germany
[4] PNSensor GmbH, D-80803 Munich, Germany
[5] Max Planck Inst Extraterr Phys, D-85741 Garching, Germany
[6] Univ Siegen, FB Phys, D-57068 Siegen, Germany
关键词
elemental mapping; silicon drift detector; ultrafast x-ray spectrometer; x-ray fluorescence;
D O I
10.1109/TNS.2007.894211
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper introduces an ultra-fast x-ray fluorescence (XRF) spectrometer based on a novel ring-shaped Semiconductor Drift Detector (SDD) and on a novel readout and processing electronics and discusses its performance. The new detector is based on 4 independent "droplef' type SDDs monolithically integrated on the same chip. The detector shape optimizes the collection angle of the fluorescence radiation. The x-ray excitation beam is focused on the sample by means of a polycapillary lens through the hole cut in the center of the detector. The "droplet" type SDD is characterized by a better energy resolution and a better peak-to-valley ratio with respect to the ones of "conventional" SDDs. The energy resolution is of the order of 140 eV FWHM on the Mn Ka line with 1 mu s shaping time at - 15 degrees C and the peak-to-valley ratio is of the order of 6000. In order to fully exploit the detection rate performance of this detector we have developed a novel read-out electronic unit with selectable shaping time and on-board histogramming capability.
引用
收藏
页码:751 / 757
页数:7
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