Power effects in indium-zinc oxide thin films for OLEDs on flexible applications

被引：25

作者：

Ho, JJ ^{[1
]}

Chen, CY

机构：

[1] Natl Taiwan Ocean Univ, Dept Elect Engn, Chilung 202, Taiwan

[2] Fortune Inst Technol, Dept Comp Sci & Informat Engn, Kaohsiung 842, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2005年 / 152卷 / 01期

关键词：

D O I：

10.1149/1.1829431

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this paper, transparent conducting indium-zinc oxide (IZO) films have been grown on a hard polycarbonate (HPC) substrate without postdeposition annealing treatment. The electrical, optical, and structural properties of these prepared films are investigated by different dc sputtering powers, such as 50, 80, and 100 W/cm(2), with/without the ion-assisted deposition (IAD) technique. An optimal IZO deposition condition is developed for flexible organic light-emitting device (OLED) applications. The IZO films grown at low temperature (similar to 50 degreesC) with dc magnetron sputtering (100 W power) and the IAD technique were used to study the electroluminescence (EL) performance of the OLEDs. The EL results are better than those that are measured with commercial indium-tin oxide anodes and well above the electro-optical application standard. (C) 2004 The Electrochemical Society.

引用

页码：G57 / G61

页数：5

共 18 条

[1] Humidity-induced crystallization of tris (8-hydroxyquinoline) aluminum layers in organic light-emitting devices [J].

Aziz, H ;

Popovic, Z ;

Xie, S ;

Hor, AM ;

Hu, NX ;

Tripp, C ;

Xu, G .

APPLIED PHYSICS LETTERS, 1998, 72 (07) :756-758

[2] Achieving full-color organic light-emitting devices for lightweight, flat-panel displays [J].

Burrows, PE ;

Gu, G ;

Bulovic, V ;

Shen, Z ;

Forrest, SR ;

Thompson, ME .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (08) :1188-1203

[3] A QUASI-DIRECT-CURRENT SPUTTERING TECHNIQUE FOR THE DEPOSITION OF DIELECTRICS AT ENHANCED RATES [J].

ESTE, G ;

WESTWOOD, WD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1845-1848

[4] Photoluminescence efficiency and absorption of aluminum-tris-quinolate (Alq(3)) thin films [J].

Garbuzov, DZ ;

Bulovic, V ;

Burrows, PE ;

Forrest, SR .

CHEMICAL PHYSICS LETTERS, 1996, 249 (5-6) :433-437

[5] INFLUENCE OF THE PLASMA ON SUBSTRATE HEATING DURING LOW-FREQUENCY REACTIVE SPUTTERING OF ALN [J].

GLOCKER, DA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (06) :2989-2993

[6] FLEXIBLE LIGHT-EMITTING-DIODES MADE FROM SOLUBLE CONDUCTING POLYMERS [J].

GUSTAFSSON, G ;

CAO, Y ;

TREACY, GM ;

KLAVETTER, F ;

COLANERI, N ;

HEEGER, AJ .

NATURE, 1992, 357 (6378) :477-479

[7] Recent progress of molecular organic electroluminescent materials and devices [J].

Hung, LS ;

Chen, CH .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2002, 39 (5-6) :143-222

[8] Electrical, optical, and structural properties of indium-tin-oxide thin films for organic light-emitting devices [J].

Kim, H ;

Gilmore, CM ;

Piqué, A ;

Horwitz, JS ;

Mattoussi, H ;

Murata, H ;

Kafafi, ZH ;

Chrisey, DB .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) :6451-6461

[9] ION-ASSISTED DEPOSITION OF OPTICAL THIN-FILMS - LOW-ENERGY VS HIGH-ENERGY BOMBARDMENT [J].

MCNEIL, JR ;

BARRON, AC ;

WILSON, SR ;

HERRMANN, WC .

APPLIED OPTICS, 1984, 23 (04) :552-559

[10] Highly transparent and conductive ZrO-In2O3 thin films prepared by dc magnetron sputtering [J].

Minami, T ;

Kakumu, T ;

Takeda, Y ;

Takata, S .

THIN SOLID FILMS, 1996, 290 :1-5

← 1 2 →