Solid-state dye-sensitized solar cell with p-type NiO as a hole collector

被引:216
作者
Bandara, J [1 ]
Weerasinghe, H [1 ]
机构
[1] Inst Fundamental Studies, Kandy, Sri Lanka
关键词
dye sensitization; p-type hole collector; electron tunneling; solar cells; NiO; TiO2;
D O I
10.1016/j.solmat.2004.05.010
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
A solid-state dye-sensitized solar cells (DSSC) comprising of p-type NiO thin layer on TiO2 was fabricated in which the dye is adsorbed on the p-type oxide and the thin NiO layer acts as a hole collector as well as a barrier for charge recombination. DSSC with NiO-coated TiO2 electrodes with Ru-dye delivers I-sc = 0.15 mA and V-oc = 480 mV. It was shown that the p-type oxide materials could be successfully used to construct DSSC and the plausible charge transfer mechanism is discussed. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:385 / 390
页数:6
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