Electron mobility exceeding 160000 cm2/V s in AlGaN/GaN heterostructures grown by molecular-beam epitaxy

被引：57

作者：

Manfra, MJ

Baldwin, KW

Sergent, AM

West, KW

Molnar, RJ

Caissie, J

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[2] MIT, Lincoln Lab, Lexington, MA 02420 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 22期

关键词：

D O I：

10.1063/1.1824176

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the transport properties of a two-dimensional electron gas (2DEG) confined in an AlGaN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy on a semi-insulating GaN template prepared by hydride vapor phase epitaxy with a threading dislocation density of similar to5x10(7) cm(-2). Using a gated Hall bar structure, the electron density (n(e)) is varied from 4.1 to 9.1x10(11) cm(-2). At T=300 mK, the 2DEG displays a maximum mobility of 167 000 cm(2)/V s at a sheet density of 9.1x10(11) cm(-2), corresponding to a mean-free-path of similar to3 mum. Shubnikov-de Haas oscillations, typically not observed at magnetic fields below 2 T in GaN, commence at B=0.6 T. (C) 2004 American Institute of Physics.

引用

页码：5394 / 5396

页数：3

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