Dislocation scattering in a two-dimensional electron gas

被引：214

作者：

Jena, D ^{[1
]}

Gossard, AC

Mishra, UK

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 13期

关键词：

D O I：

10.1063/1.126143

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed. The theory is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors which have a large number of line dislocations piercing through the 2DEG. The scattering time due to dislocations is derived for a 2DEG in closed form. This work identifies dislocation scattering as a mobility-limiting scattering mechanism in 2DEGs with high dislocation densities. The insensitivity of the 2DEG (as compared to bulk) to dislocation scattering is explained by the theory. (C) 2000 American Institute of Physics. [S0003-6951(00)01813-1].

引用

页码：1707 / 1709

页数：3

共 19 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[2]

DAVIES JH, 1998, PHYSICS LOW DIMENSIO

[3] High mobility two-dimensional electron gas in AlGaN GaN heterostructures grown by plasma-assisted molecular beam epitaxy [J].

Elsass, CR ;

Smorchkova, IP ;

Heying, B ;

Haus, E ;

Fini, P ;

Maranowski, K ;

Ibbetson, JP ;

Keller, S ;

Petroff, PM ;

DenBaars, SP ;

Mishra, UK ;

Speck, JS .

APPLIED PHYSICS LETTERS, 1999, 74 (23) :3528-3530

[4] Electron mobility in AlxGa1-xN/GaN heterostructures [J].

Hsu, L ;

Walukiewicz, W .

PHYSICAL REVIEW B, 1997, 56 (03) :1520-1528

[5] STRUCTURAL EVOLUTION IN EPITAXIAL METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN GAN FILMS ON SAPPHIRE [J].

KAPOLNEK, D ;

WU, XH ;

HEYING, B ;

KELLER, S ;

KELLER, BP ;

MISHRA, UK ;

DENBAARS, SP ;

SPECK, JS .

APPLIED PHYSICS LETTERS, 1995, 67 (11) :1541-1543

[6] REDUCTION OF DISLOCATIONS IN INGAAS LAYER ON GAAS USING EPITAXIAL LATERAL OVERGROWTH [J].

KATO, K ;

KUSUNOKI, T ;

TAKENAKA, C ;

TANAHASHI, T ;

NAKAJIMA, K .

JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) :174-179

[7] HIGH DISLOCATION DENSITIES IN HIGH-EFFICIENCY GAN-BASED LIGHT-EMITTING-DIODES [J].

LESTER, SD ;

PONCE, FA ;

CRAFORD, MG ;

STEIGERWALD, DA .

APPLIED PHYSICS LETTERS, 1995, 66 (10) :1249-1251

[8] Dislocation scattering in GaN [J].

Look, DC ;

Sizelove, JR .

PHYSICAL REVIEW LETTERS, 1999, 82 (06) :1237-1240

[9] Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition [J].

Marchand, H ;

Wu, XH ;

Ibbetson, JP ;

Fini, PT ;

Kozodoy, P ;

Keller, S ;

Speck, JS ;

DenBaars, SP ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 1998, 73 (06) :747-749

[10] Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1997, 70 (11) :1417-1419

← 1 2 →