STRUCTURAL EVOLUTION IN EPITAXIAL METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN GAN FILMS ON SAPPHIRE

被引：304

作者：

KAPOLNEK, D ^{[1
]}

WU, XH ^{[1
]}

HEYING, B ^{[1
]}

KELLER, S ^{[1
]}

KELLER, BP ^{[1
]}

MISHRA, UK ^{[1
]}

DENBAARS, SP ^{[1
]}

SPECK, JS ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,COLL ENGN,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 11期

关键词：

D O I：

10.1063/1.114486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural evolution of epitaxial GaN layers grown on basal plane sapphire has been studied by atomic force microscopy (AFM), x-ray diffraction, and transmission electron microscopy (TEM). High-temperature growth (1050-1080 degrees C) on optimized nucleation layers leads to clear, specular films. AFM on the as-grown surface shows evenly spaced monatomic steps indicative of layer by layer growth. AFM measurements show a step termination density of 1.7x10(8) cm(-2) for 5 mu m films. This value is in close agreement with TEM measurements of screw and mixed screw-edge threading dislocation density. The total measured threading dislocation density in the 5 mu m films is 7 x 10(8) cm(-2). (C) 1995 American Institute of Physics.

引用

页码：1541 / 1543

页数：3

共 12 条

[1] EFFECTS OF AIN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN AND GA1-XALXN(0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.4) FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOVPE [J].

AKASAKI, I ;

AMANO, H ;

KOIDE, Y ;

HIRAMATSU, K ;

SAWAKI, N .

JOURNAL OF CRYSTAL GROWTH, 1989, 98 (1-2) :209-219

[2] HETEROEPITAXIAL GROWTH AND THE EFFECT OF STRAIN ON THE LUMINESCENT PROPERTIES OF GAN FILMS ON (1120) AND (0001) SAPPHIRE SUBSTRATES [J].

AMANO, H ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08) :L1384-L1386

[3] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[4]

KAPOLNEK D, UNPUB

[5]

KELLER BP, IN PRESS J ELECTRON

[6] HIGH-QUALITY ALN AND GAN EPILAYERS GROWN ON (00.1) SAPPHIRE, (100), AND (111) SILICON SUBSTRATES [J].

KUNG, P ;

SAXLER, A ;

ZHANG, X ;

WALKER, D ;

WANG, TC ;

FERGUSON, I ;

RAZEGHI, M .

APPLIED PHYSICS LETTERS, 1995, 66 (22) :2958-2960

[7] INFLUENCE OF BUFFER LAYERS ON THE DEPOSITION OF HIGH-QUALITY SINGLE-CRYSTAL GAN OVER SAPPHIRE SUBSTRATES [J].

KUZNIA, JN ;

KHAN, MA ;

OLSON, DT ;

KAPLAN, R ;

FREITAS, J .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (09) :4700-4702

[8] HIGH DISLOCATION DENSITIES IN HIGH-EFFICIENCY GAN-BASED LIGHT-EMITTING-DIODES [J].

LESTER, SD ;

PONCE, FA ;

CRAFORD, MG ;

STEIGERWALD, DA .

APPLIED PHYSICS LETTERS, 1995, 66 (10) :1249-1251

[9] GAN GROWTH USING GAN BUFFER LAYER [J].

NAKAMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A) :L1705-L1707

[10] MICROSTRUCTURAL CHARACTERIZATION OF ALPHA-GAN FILMS GROWN ON SAPPHIRE BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

QIAN, W ;

SKOWRONSKI, M ;

DEGRAEF, M ;

DOVERSPIKE, K ;

ROWLAND, LB ;

GASKILL, DK .

APPLIED PHYSICS LETTERS, 1995, 66 (10) :1252-1254

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