Er3+ photoluminescence from Er-doped amorphous SiOx films prepared by pulsed laser deposition at room temperature:: The effects of oxygen concentration

被引：26

作者：

Ha, JS ^{[1
]}

Bae, CH

Nam, SH

Park, SM

Jang, YR

Yoo, KH

Park, K

机构：

[1] Korea Univ, Dept Biol & Chem Engn, Seoul 136701, South Korea

[2] Kyung Hee Univ, Dept Chem, Seoul, South Korea

[3] Kyung Hee Univ, Dept Phys, Seoul, South Korea

[4] Seoul Natl Univ, Dept Nano Sci & Technol, Seoul, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 20期

关键词：

D O I：

10.1063/1.1573335

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated Er-doped amorphous SiOx films by laser ablation of a Si:Er2O3 target in He atmosphere. The photoluminescence intensity at 1.54 mum was highly dependent on the oxygen content in the film, which turned out to be changed significantly by the ambient He pressure. Also, we have adopted time-of-flight quadrupole mass spectroscopy to obtain kinetic energies of ionic species in a plume produced by laser ablation. Si and Er ions do not overlap spatially as they expand toward the Si substrate and Er ions impinge on the preformed SiOx layer. (C) 2003 American Institute of Physics.

引用

页码：3436 / 3438

页数：3

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