Photoluminescence and photoluminescence excitation spectroscopy of Er-doped Si prepared by laser ablation

被引：14

作者：

Ng, WL ^{[1
]}

Temple, MP ^{[1
]}

Childs, PA ^{[1
]}

Wellhofer, F ^{[1
]}

Homewood, KP ^{[1
]}

机构：

[1] Univ Surrey, Sch Elect Engn Informat Technol & Math, Guildford GU2 5XH, Surrey, England

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 01期

关键词：

D O I：

10.1063/1.124324

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strong room-temperature photoluminescence (PL) peaks of Er3+ (I-4(13/2)-->I-4(15/2)) ions at similar to 1.535 mu m are obtained from Er-doped thin-film Si layers prepared by laser ablation. The Si sample was found to produce optimum photoluminescence peaks at an annealing temperature of about 450 degrees C. Experimental results also shows that the thermal quenching of the luminescence intensity from 80 K to room temperature is a factor of 2.5 only. PL excitation measurements reveal that the Er luminescence is significantly excited via the silicon band edge. The lifetime of the luminescence from the Si:Er samples is 90+/-10 mu s. (C) 1999 American Institute of Physics. [S0003-6951(99)02427-4].

引用

页码：97 / 99

页数：3

共 26 条

[1] Growth of Er-doped silicon using metalorganics by plasma-enhanced chemical vapor deposition [J].

Andry, PS ;

Varhue, WJ ;

Ladipo, F ;

Ahmed, K ;

Adams, E ;

Lavoie, M ;

Klein, PB ;

Hengehold, R ;

Hunter, J .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (01) :551-558

[2] THE ELECTRICAL AND DEFECT PROPERTIES OF ERBIUM-IMPLANTED SILICON [J].

BENTON, JL ;

MICHEL, J ;

KIMERLING, LC ;

JACOBSON, DC ;

XIE, YH ;

EAGLESHAM, DJ ;

FITZGERALD, EA ;

POATE, JM .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) :2667-2671

[3] ROOM-TEMPERATURE PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON [J].

BRESLER, MS ;

GUSEV, OB ;

KUDOYAROVA, VK ;

KUZNETSOV, AN ;

PAK, PE ;

TERUKOV, EI ;

YASSIEVICH, IN ;

ZAKHARCHENYA, BP ;

FUHS, W ;

STURN, A .

APPLIED PHYSICS LETTERS, 1995, 67 (24) :3599-3601

[4] Direct evidence of impact excitation and spatial profiling of excited Er in light emitting Si diodes [J].

Coffa, S ;

Franzo, G ;

Priolo, F ;

Pacelli, A ;

Lacaita, A .

APPLIED PHYSICS LETTERS, 1998, 73 (01) :93-95

[5]

CUSTER JS, 1992, MATER RES SOC SYMP P, V235, P51

[6] Effects of hydrogen plasma treatment on the 1.54 μm luminescence of erbium-doped porous silicon [J].

Dejima, T ;

Saito, R ;

Yugo, S ;

Isshiki, H ;

Kimura, T .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (02) :1036-1040

[7] Room temperature 1.54 mu m light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy [J].

Du, CX ;

Ni, WX ;

Joelsson, KB ;

Hansson, GV .

APPLIED PHYSICS LETTERS, 1997, 71 (08) :1023-1025

[8] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].

ENNEN, H ;

SCHNEIDER, J ;

POMRENKE, G ;

AXMANN, A .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945

[9] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].

ENNEN, H ;

POMRENKE, G ;

AXMANN, A ;

EISELE, K ;

HAYDL, W ;

SCHNEIDER, J .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :381-383

[10] ROOM-TEMPERATURE ELECTROLUMINESCENCE FROM ER-DOPED CRYSTALLINE SI [J].

FRANZO, G ;

PRIOLO, F ;

COFFA, S ;

POLMAN, A ;

CARNERA, A .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2235-2237

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