Effects of hydrogen plasma treatment on the 1.54 μm luminescence of erbium-doped porous silicon

被引：16

作者：

Dejima, T ^{[1
]}

Saito, R ^{[1
]}

Yugo, S ^{[1
]}

Isshiki, H ^{[1
]}

Kimura, T ^{[1
]}

机构：

[1] Univ Electrocommun, Chofu, Tokyo 1828585, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 02期

关键词：

D O I：

10.1063/1.368100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Well resolved, sharp photoluminescence (PL) peaks of Er3+ (4f(11)) ions at similar to 1.54 mu m are obtained from Er-doped porous silicon (PS:Er) on which a hydrogen plasma treatment is carried out after electrochemical incorporation of Er3+ ions into porous silicon. The full width at half maximum (FWHM) of the 1.538 mu m main peak at 20 K is less than 1 nm, which is much smaller than that obtained from PS:Er samples annealed in a H-2 or O-2 flow (FWHM 7-10 nm), and is comparable to that of Er-doped crystalline silicon. The thermal quenching of the PL intensity is, however, relatively small, the PL intensity decreasing only by a factor of 10 from 20 to 300 K. (C) 1998 American Institute of Physics. [S0021-8979(98)03114-4].

引用

收藏

页码：1036 / 1040

页数：5

相关论文

共 26 条

[1] ROOM-TEMPERATURE PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON [J].

BRESLER, MS ;

GUSEV, OB ;

KUDOYAROVA, VK ;

KUZNETSOV, AN ;

PAK, PE ;

TERUKOV, EI ;

YASSIEVICH, IN ;

ZAKHARCHENYA, BP ;

FUHS, W ;

STURN, A .

APPLIED PHYSICS LETTERS, 1995, 67 (24) :3599-3601

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[3] ERBIUM LUMINESCENCE IN POROUS SILICON DOPED FROM SPIN-ON FILMS [J].

DOROFEEV, AM ;

GAPONENKO, NV ;

BONDARENKO, VP ;

BACHILO, EE ;

KAZUCHITS, NM ;

LESHOK, AA ;

TROYANOVA, GN ;

VOROSOV, NN ;

BORISENKO, VE ;

GNASER, H ;

BOCK, W ;

BECKER, P ;

OECHSNER, H .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (06) :2679-2683

[4] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].

ENNEN, H ;

SCHNEIDER, J ;

POMRENKE, G ;

AXMANN, A .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945

[5] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].

ENNEN, H ;

POMRENKE, G ;

AXMANN, A ;

EISELE, K ;

HAYDL, W ;

SCHNEIDER, J .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :381-383

[6] OPTICAL ACTIVATION OF ER-3+ IMPLANTED IN SILICON BY OXYGEN IMPURITIES [J].

FAVENNEC, PN ;

LHARIDON, H ;

MOUTONNET, D ;

SALVI, M ;

GAUNEAU, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (04) :L524-L526

[7] LUMINESCENCE OF ERBIUM IMPLANTED IN VARIOUS SEMICONDUCTORS - IV-MATERIALS, III-V-MATERIALS AND II-VI MATERIALS [J].

FAVENNEC, PN ;

LHARIDON, H ;

SALVI, M ;

MOUTONNET, D ;

LEGUILLOU, Y .

ELECTRONICS LETTERS, 1989, 25 (11) :718-719

[8] Enhanced Yb3+-related 0.98 μm emission in porous silicon and its time decay characteristics [J].

Kimura, T ;

Nishida, Y ;

Yokoi, A ;

Saito, R .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) :1005-1008

[9] ELECTROCHEMICAL ER DOPING OF POROUS SILICON AND ITS ROOM-TEMPERATURE LUMINESCENCE AT SIMILAR-TO-1.54 MU-M [J].

KIMURA, T ;

YOKOI, A ;

HORIGUCHI, H ;

SAITO, R ;

IKOMA, T ;

SATO, A .

APPLIED PHYSICS LETTERS, 1994, 65 (08) :983-985

[10] ROOM-TEMPERATURE LUMINESCENCE FROM ER-IMPLANTED SEMIINSULATING POLYCRYSTALLINE SILICON [J].

LOMBARDO, S ;

CAMPISANO, SU ;

VANDENHOVEN, GN ;

CACCIATO, A ;

POLMAN, A .

APPLIED PHYSICS LETTERS, 1993, 63 (14) :1942-1944