LUMINESCENCE OF ERBIUM IMPLANTED IN VARIOUS SEMICONDUCTORS - IV-MATERIALS, III-V-MATERIALS AND II-VI MATERIALS

被引：401

作者：

FAVENNEC, PN

LHARIDON, H

SALVI, M

MOUTONNET, D

LEGUILLOU, Y

机构：

[1] CNET/LAB/OCM, France

来源：

关键词：

D O I：

10.1049/el:19890486

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：718 / 719

页数：2

共 6 条

[1] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON
ENNEN, H
SCHNEIDER, J
POMRENKE, G
AXMANN, A
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 943 - 945
[2] NONDIFFUSION AND 1.54 MU-M LUMINESCENCE OF ERBIUM IMPLANTED IN INP
FAVENNEC, PN
LHARIDON, H
LECORRE, A
SALVI, M
GAUNEAU, M
[J]. ELECTRONICS LETTERS, 1987, 23 (13) : 684 - 686
[3] POMRENKE G, 1986, J APPL PHYS, V59, P610
[4] ERBIUM IMPLANTED IN III-V MATERIALS
ROCHAIX, C
ROLLAND, A
FAVENNEC, PN
LAMBERT, B
LECORRE, A
LHARIDON, H
SALVI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12): : L2348 - L2350
[5] BEHAVIOR OF ERBIUM IMPLANTED IN INP
ROCHAIX, C
ROLLAND, A
FAVENNEC, PN
LAMBERT, B
LECORRE, A
LHARIDON, H
SALVI, M
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (05) : 351 - 354
[6] OBSERVATION OF ENHANCED SINGLE LONGITUDINAL MODE-OPERATION IN 1.5-MU-M GAINASP ERBIUM-DOPED SEMICONDUCTOR INJECTION-LASERS
TSANG, WT
LOGAN, RA
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (25) : 1686 - 1688