BEHAVIOR OF ERBIUM IMPLANTED IN INP

[1] INCORPORATION OF ERBIUM IN GAAS BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) : 2803 - 2806

[2] ENNEN H, 1987, J APPL PHYS, V61, P4807

[3] NONDIFFUSION AND 1.54 MU-M LUMINESCENCE OF ERBIUM IMPLANTED IN INP [J]. ELECTRONICS LETTERS, 1987, 23 (13) : 684 - 686

[4] LIQUID-PHASE EPITAXY AND CHARACTERIZATION OF RARE-EARTH-ION (YB, ER) DOPED INP [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 85 (03) : 345 - 356

[5] GOLD DIFFUSION IN INP [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 824 - 827

[6] ERBIUM DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 49 - 51

[7] OBSERVATION OF ENHANCED SINGLE LONGITUDINAL MODE-OPERATION IN 1.5-MU-M GAINASP ERBIUM-DOPED SEMICONDUCTOR INJECTION-LASERS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (25) : 1686 - 1688

[8] ER-DOPED INP AND GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1987, 51 (13) : 1010 - 1012

[9] ATELIERS ELECTRO THE

[1] INCORPORATION OF ERBIUM IN GAAS BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) : 2803 - 2806

[2] ENNEN H, 1987, J APPL PHYS, V61, P4807

[3] NONDIFFUSION AND 1.54 MU-M LUMINESCENCE OF ERBIUM IMPLANTED IN INP [J]. ELECTRONICS LETTERS, 1987, 23 (13) : 684 - 686

[4] LIQUID-PHASE EPITAXY AND CHARACTERIZATION OF RARE-EARTH-ION (YB, ER) DOPED INP [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 85 (03) : 345 - 356

[5] GOLD DIFFUSION IN INP [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 824 - 827

[6] ERBIUM DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 49 - 51

[7] OBSERVATION OF ENHANCED SINGLE LONGITUDINAL MODE-OPERATION IN 1.5-MU-M GAINASP ERBIUM-DOPED SEMICONDUCTOR INJECTION-LASERS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (25) : 1686 - 1688

[8] ER-DOPED INP AND GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1987, 51 (13) : 1010 - 1012

[9] ATELIERS ELECTRO THE