Sb on GaAs(110) structure studied by direct methods and chemical-shift photoelectron diffraction

被引：4

作者：

Ascolani, H

Avila, J

Franco, N

Asensio, MC

机构：

[1] Univ Paris Sud, LURE, F-91405 Orsay, France

[2] Comis Nacl Energia Atom, Ctr Atom Bariloche, RA-8400 Bariloche, Rio Negro, Argentina

[3] Comis Nacl Energia Atom, Inst Balseiro, RA-8400 Bariloche, Rio Negro, Argentina

[4] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain

来源：

APPLIED SURFACE SCIENCE | 1998年 / 123卷

关键词：

interfaces; semiconductors; photoelectron diffraction;

D O I：

10.1016/S0169-4332(97)00505-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have determined the two unequivalent adsorption sites of Sb in the GaAs(110)p(1 X 1)-Sb(1 ML) surface by evaluating a simple Fourier transform of scanned-energy photoelectron diffraction data corresponding to chemically shifted Sb 4d core levels. Our results show, in a model-independent procedure, that the atomic geometry of the p(1 X 1)Sb overlayer contradicts various models proposed for this surface and is consistent only with the epitaxial continued layer structure (ECLS). (C) 1998 Elsevier Science B.V.

引用

页码：223 / 227

页数：5

共 9 条

[1]

ASCOLANI H, 1997, PHYS REV LETT, V78, P2607

[2] EPITAXIAL CONTINUED-LAYER STRUCTURE OF SB ON GAAS(110) AS OBSERVED BY GRAZING-INCIDENCE X-RAY-DIFFRACTION [J].