Annealing effect on magnetic and electronic properties of polycrystalline Ge1-xMnx semiconductors grown by MBE

被引：14

作者：

Cho, YM

Yu, SS

Ihm, YE

Kim, D

Kim, H

Baek, JS

Kim, CS

Lee, BT

机构：

[1] Chungnam Natl Univ, Sch Mat Engn, Taejon 305764, South Korea

[2] Korea Res Inst Stand & Sci, Taejon 305600, South Korea

[3] Kongju Natl Univ, Kong Ju 314701, South Korea

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 282卷

关键词：

magnetic semiconductor; spintronics materials; GeMn semiconductors;

D O I：

10.1016/j.jmmm.2004.04.089

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

MBE-grown poly Ge1-xMnx/SiO2/(100)Si Semiconductor thin films were annealed, and magnetic properties of the annealed semiconductors have been studied. As-grown poly Ge1-xMnx semiconductor has p-type carriers and electrical resistivity is in the range of 4.0 x 10(-3)-0.5 x 10(-3) Omegacm at room temperature. The carrier type is not changed during annealing, but the electrical resistivity increases with annealing temperature and time. During annealing Ge3Mn5 ferromagnetic phase transforms into Ge8Mn11 anti-ferromagnetic phase and then the Ge8Mn11 phase is decomposed into Ge, beta-Mn and some unidentified phases. (C) 2004 Published by Elsevier B.V.

引用

页码：385 / 388

页数：4

共 15 条

[1] Negative magnetoresistance in GaAs with magnetic MnAs nanoclusters [J].