Boron segregation in As-implanted Si caused by electric field and transient enhanced diffusion

被引：7

作者：

Chang, RD ^{[1
]}

Choi, PS

Kwong, DL

Wristers, D

Chu, PK

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

[2] Adv Micro Devices Inc, Austin, TX 78741 USA

[3] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 14期

关键词：

D O I：

10.1063/1.121159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Boron segregation in an implanted arsenic profile in Si during annealing was investigated under various annealing conditions. It was found that both the implant damage created by arsenic implantation and arsenic deactivation enhance the diffusion of the embedded boron layer toward the shallow As implanted profile. The segregation phenomenon was observed in both 650 degrees C furnace annealed (FA) and 1000 degrees C rapid thermally annealed (RTA) samples. For the 650 degrees C FA sample, the boron segregation peak was located at the junction formed by implanted As, where residual dislocation loops at the original amorphous/crystalline (a/c) interface were also observed. However, no a/c interface dislocation loops were found to be present for the RTA samples. Additional anomalous boron segregation was observed for the 1000 degrees C RTA+750 degrees C FA samples. The additional boron segregation is not correlated with defect layers, It is, therefore, concluded that the anomalous boron segregation is caused by the electric field resulting from the formation of a p-n junction. (C) 1998 American Institute of Physics. [S0003-6951(98)00214-9].

引用

页码：1709 / 1711

页数：3