Quantitative ARXPS investigation of systems with ultrathin aluminium oxide layers

被引:28
作者
Kozlowska, M [1 ]
Reiche, R [1 ]
Oswald, S [1 ]
Vinzelberg, H [1 ]
Hübner, R [1 ]
Wetzig, K [1 ]
机构
[1] IFW Dresden, Leibniz Inst Festkorper & Werkstoffforsch, D-01171 Dresden, Germany
关键词
ARXPS; model calculation; aluminium oxide; ECR oxidation; XRR;
D O I
10.1002/sia.1988
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Angle-resolved x-ray photoelectron spectroscopy (ARXPS) is a non-destructive method to investigate the near-surf ace structure of specimens with a flat surface. For interpretation of the electron intensities emitted from different depth regions, model calculations are necessary. Based on an earlier algorithm we have developed a program for ARXPS studies of thin multilayers. In our model calculation the sample structure is treated as consisting of several layers (one to three) on the substrate, whereas the top layer can be incomplete. Emitted electrons are assumed to be attenuated exponentially in the layers. Different atomic volumes, electron attenuation lengths (including consideration of elastic scattering) and assumptions on stoichiometry are taken into account for the particular layers. As an application of our model calculations we present a study of a set of Al samples that were oxidized by different methods, i.e. natural and plasma oxidation (plasma obtained by electron cyclotron resonance). The oxide layers produced by plasma oxidation were protected by a 2 nm thick Co film, before exposing the samples to the air. Additionally, in order to check our results of the ARXPS model calculation, x-ray reflectometry (XRR) analysis was used. Copyright (C) 2004 John Wiley Sons, Ltd.
引用
收藏
页码:1600 / 1608
页数:9
相关论文
共 27 条
[1]  
Briggs D., 1992, PRACTICAL SURFACE AN
[2]  
Cumpson PJ, 1997, SURF INTERFACE ANAL, V25, P430, DOI 10.1002/(SICI)1096-9918(199706)25:6<430::AID-SIA254>3.0.CO
[3]  
2-7
[4]   ANGLE-RESOLVED XPS AND AES - DEPTH-RESOLUTION LIMITS AND A GENERAL COMPARISON OF PROPERTIES OF DEPTH-PROFILE RECONSTRUCTION METHODS [J].
CUMPSON, PJ .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1995, 73 (01) :25-52
[5]   ELASTIC-SCATTERING CORRECTIONS IN AES AND XPS .1. 2 RAPID MONTE-CARLO METHODS FOR CALCULATING THE DEPTH DISTRIBUTION FUNCTION [J].
CUMPSON, PJ .
SURFACE AND INTERFACE ANALYSIS, 1993, 20 (08) :727-741
[6]  
DELRIO MS, 1999, P SOC PHOTO-OPT INST, V3448, P340
[7]   Design and use of the Microsoft Excel Solver [J].
Fylstra, D ;
Lasdon, L ;
Watson, J ;
Waren, A .
INTERFACES, 1998, 28 (05) :29-55
[8]   Compositional, structural, and electrical characterization of plasma oxidized thin aluminum layers for spin-tunnel junctions [J].
Gillies, MF ;
Kuiper, AET ;
Coehoorn, R ;
Donkers, JJTM .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (01) :429-434
[9]   PROPERTIES OF OXIDIZED SILICON AS DETERMINED BY ANGULAR-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
HILL, JM ;
ROYCE, DG ;
FADLEY, CS ;
WAGNER, LF ;
GRUNTHANER, FJ .
CHEMICAL PHYSICS LETTERS, 1976, 44 (02) :225-231
[10]   Relationships between electron inelastic mean free paths, effective attenuation lengths, and mean escape depths [J].
Jablonski, A ;
Powell, CJ .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1999, 100 :137-160