Performance comparison and channel length scaling of strained SiFETs on SiGe-on-insulator (SGOI)

被引：16

作者：

Cai, J ^{[1
]}

Rim, K ^{[1
]}

Bryant, A ^{[1
]}

Jenkins, K ^{[1
]}

Ouyang, C ^{[1
]}

Singh, D ^{[1
]}

Ren, Z ^{[1
]}

Lee, K ^{[1
]}

Yin, H ^{[1
]}

Hergenrother, J ^{[1
]}

Kanarsky, T ^{[1
]}

Kumar, A ^{[1
]}

Wang, X ^{[1
]}

Bedell, S ^{[1
]}

Reznicek, A ^{[1
]}

Hovel, H ^{[1
]}

Sadana, D ^{[1
]}

Uriarte, D ^{[1
]}

Mitchell, R ^{[1
]}

Ott, J ^{[1
]}

Mocuta, D ^{[1
]}

O'Neil, P ^{[1
]}

Mocuta, A ^{[1
]}

Leobandung, E ^{[1
]}

Miller, R ^{[1
]}

Haensch, W ^{[1
]}

Ieong, M ^{[1
]}

机构：

[1] IBM Corp, SRDC, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419097

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The scaling behavior of current drive enhancements in strained-si I icon NFETs on SiGe-on-insulator (SGOI) is reported. SGOI NFET enhancement exhibits only moderate channel length dependence down to sub-50 nm regime, indicating strain-induced enhancement can be sustained in future technology nodes. This is contrary to some previous reports which suggested dramatic reduction of strain-induced NFET current enhancement with channel length scaling. A novel analysis technique was developed to account for the difference in self-heating in SGOI and SOI devices to enable intrinsic device performance comparison. Additive effects of biaxial strain from the Si/SiGe heterostructure and process-induced uniaxial stress are experimentally demonstrated for the first time.

引用

页码：165 / 168

页数：4

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