Semiconducting boron carbonitride nanostructures: Nanotubes and nanofibers

被引：97

作者：

Yu, J ^{[1
]}

Ahn, J

Yoon, SF

Zhang, Q

Rusli

Gan, B

Chew, K

Yu, MB

Bai, XD

Wang, EG

机构：

[1] Nanyang Technol Univ, Ctr Microelect, Singapore 639798, Singapore

[2] Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China

[3] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 13期

关键词：

D O I：

10.1063/1.1311953

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly oriented boron carbonitride (BCN) nanostructures consisting of nanotubes and nanofibers have been synthesized by bias-assisted hot-filament chemical vapor deposition from the source gases of B2H6, CH4, N-2, and H-2. It is found that the B concentration of the BCN nanostructures increases with increasing B2H6 in the gas mixture, and the highest B concentration is 45 at. %. Photoluminescence spectrum shows that the BCN nanostructures, identified as B0.34C0.42N0.24, are semiconductors with a band gap energy of around 1.0 eV. (C) 2000 American Institute of Physics. [S0003-6951(00)00839-1].

引用

页码：1949 / 1951

页数：3

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