Effect of seed layer on the growth of ZnO nanorods

被引:362
作者
Song, Jaejin [1 ]
Lim, Sangwoo [1 ]
机构
[1] Yonsei Univ, Dept Chem Engn, Seoul 120749, South Korea
关键词
D O I
10.1021/jp0655017
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
To investigate the effect of seed layer on the growth of ZnO nanorods during hydrothermal synthesis, different types of sputter-deposited ZnO films were used. The changes in growth rate, diameter, density, and surface area of highly oriented ZnO nanorods on each seed layer were examined. The growth rate of ZnO nanorods has a strong relationship with the intensity of (0001) orientation. The density of nanorods per unit area is larger if the diameter of the nanorods is smaller. The total surface area of ZnO nanorods is determined by the growth rate and density per unit area. It was found that the morphology of the ZnO nanorods is strongly influenced by the thickness of the seed layer and the corresponding crystal size. A thinner ZnO seed layer provides a higher surface area of ZnO nanorods because of the smaller crystal size of the seed layer. The orientation of the ZnO seed layer significantly affects the crystallinity of the nanorods.
引用
收藏
页码:596 / 600
页数:5
相关论文
共 32 条
  • [1] AXTER JB, 2006, NANOTECHNOLOGY, V17, pS304
  • [2] Periodic array of uniform ZnO nanorods by second-order self-assembly
    Chik, H
    Liang, J
    Cloutier, SG
    Kouklin, N
    Xu, JM
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (17) : 3376 - 3378
  • [3] Silicon nanowire devices
    Chung, SW
    Yu, JY
    Heath, JR
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (15) : 2068 - 2070
  • [4] Low-temperature growth and field emission of ZnO nanowire arrays -: art. no. 044315
    Cui, JB
    Daghlian, CP
    Gibson, UJ
    Püsche, R
    Geithner, P
    Ley, L
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (04)
  • [5] Enhanced nucleation, growth rate, and dopant incorporation in ZnO nanowires
    Cui, JB
    Gibson, UJ
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (46) : 22074 - 22077
  • [6] Dev A, 2006, J PHYS CHEM B, V110, P14266, DOI [10.1021/jp062729l, 10.1021/jp0627291]
  • [7] Gate-refreshable nanowire chemical sensors
    Fan, ZY
    Lu, JG
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (12) : 1 - 3
  • [8] Individual β-Ga2O3 nanowires as solar-blind photodetectors
    Feng, P
    Zhang, JY
    Li, QH
    Wang, TH
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (15)
  • [9] CONTROL OF PREFERRED ORIENTATION FOR ZNOX FILMS - CONTROL OF SELF-TEXTURE
    FUJIMURA, N
    NISHIHARA, T
    GOTO, S
    XU, JF
    ITO, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1993, 130 (1-2) : 269 - 279
  • [10] GO M, 2005, J SOLID STATE CHEM, V17, P3120